Multiple-surface imposition vapor deposition mask

ABSTRACT

A method for producing a multiple-surface imposition vapor deposition mask that enhances definition and reduces weight even when a size is increased. Each of multiple masks in an open space in a frame is configured by a metal mask having a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows. In formation of the plurality of masks, after each of the metal masks and a resin film material for producing the resin mask are attached to the frame, the resin film material is processed, and the openings corresponding to the pattern to be produced by vapor deposition are formed in a plurality of rows lengthwise and crosswise, whereby the multiple-surface imposition vapor deposition mask of the above described configuration is produced.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/372,676, filed Apr. 2, 2019, which is a continuation of U.S.application Ser. No. 15/391,107, filed Dec. 27, 2016, which is acontinuation of U.S. application Ser. No. 14/879,386, filed Oct. 9,2015, now U.S. Pat. No. 9,548,453, issued Jan. 17, 2017, the entiretiesof which are incorporated herein by reference, which is a division ofU.S. application Ser. No. 14/371,181, filed Jul. 9, 2014, now U.S. Pat.No. 9,343,679, issued May 17, 2016, which in turn is the National Stageof International Application No. PCT/JP2013/050426, filed Jan. 11, 2013,which designated the United States.

FIELD OF THE INVENTION

The present invention relates to a method for producing amultiple-surface imposition vapor deposition mask, a multiple-surfaceimposition vapor deposition mask obtained therefrom, and a method forproducing an organic semiconductor element.

BACKGROUND OF THE INVENTION

Conventionally, in production of an organic EL element, a vapordeposition mask that is composed of a metal formed by a number ofmicroscopic slits being arranged in parallel with one another atmicroscopic spaces in a region that should be subjected to vapordeposition, for example, has been used in formation of an organic layerof an organic EL element or a cathode electrode. While in the case ofusing the vapor deposition mask, the vapor deposition mask is placed ona substrate front surface that should be subjected to vapor depositionand is held by using a magnet from a back surface, the rigidity of theslits is extremely small, and therefore, distortion easily occurs to theslits when the vapor deposition mask is held on the substrate frontsurface, which becomes an obstacle to enhancement in definition orupsizing of the products in which the slit lengths are large.

Various studies have been made on the vapor deposition masks forpreventing distortion of slits, and, for example, Patent Literature 1proposes a vapor deposition mask including a base plate that also servesa first metal mask including a plurality of openings, a second metalmask including a number of microscopic slits in regions to cover theaforementioned openings, and a mask pulling and holding device thatpositions the second metal mask on the base plate in a state in whichthe second metal mask is pulled in the longitudinal direction of theslits. Namely, the vapor deposition mask with two kinds of metal masksbeing combined is proposed. It is indicated that according to the vapordeposition mask, slit precision can be ensured without occurrence ofdistortion to the slits.

Incidentally, in recent years, with upsizing of the products usingorganic EL elements or increase in substrate sizes, a demand forupsizing are also growing with respect to vapor deposition masks, andthe metal plates for use in production of the vapor deposition maskscomposed of metals are also upsized. However, with the present metalprocessing technique, it is difficult to form slits in a large metalplate with high precision, and even if distortion in slit portions canbe prevented by the method proposed in the above described PatentLiterature 1 or the like, the method or the like cannot respond toenhancement in definition of the slits. Further, in the case of use of avapor deposition mask composed of only a metal, the weight thereof alsoincreases with upsizing, and the total mass including a frame alsoincreases, which becomes a hindrance to handling.

Furthermore, while a vapor deposition mask is usually used in a statefixed to the frame, when the vapor deposition mask is upsized, therearises the problem of being incapable of performing positioning of theframe and the vapor deposition mask with high precision. In particular,in the case of a multiple-surface imposition vapor deposition maskconfigured by arranging a plurality of masks by dividing the pluralityof masks in lengthwise and crosswise directions of the inside of theframe, displacement occurs to opening patterns of the respective masksunless positioning of the respective masks and the frame is performedwith high precision, and therefore, the positioning precision problembecomes noticeable.

Further, in regard with a multiple-surface imposition vapor depositionmask, Patent Literature 2 proposes the configuration in which as thevapor deposition mask to be attached to the frame, a plurality ofstrip-shaped unit masks divided in the longitudinal direction of a frameopening (In the unit mask, a plurality of unit masking patterns areformed at predetermined spaces along the longitudinal directionthereof.) are used, and both end portions of the respective plurality ofunit masks are fixed and attached to the frame in the short lengthdirection of the frame opening so as to be given a predetermined pullingforce. It is indicated that according to the configuration, even if themultiple-surface imposition vapor deposition mask (the opening area ofthe frame) is upsized, the positional displacements of the respectiveunit masking patterns due to distortion by the tare weight of the maskand the like can be restrained.

By using a plurality of strip-shaped unit masks as in Patent Literature2, the positioning displacement in one direction (a short lengthdirection) in the frame opening is certainly restrained to some degree,but unless positioning at the time of attaching the unit masks in thestrip shapes respectively to the frame is also performed with highprecision, the problem of displacement of the opening pattern in theother direction (the longitudinal direction) is not solved. Further,since the unit mask in the strip shape is constructed by a metal plate,the problem of positional displacements of the respective unit maskingpatterns due to distortion by the tare weights of the masks and thelike, and the problem of difficulty in handling due to increase in thetotal mass including the frame are not thoroughly solved.

CITATION LIST Patent Literature

Patent Literature 1: Japanese Patent Laid-Open No. 2003-332057

Patent Literature 2: Japanese Patent Laid-Open No. 2003-217850

SUMMARY OF THE INVENTION Technical Problem

The present invention is made in the light of the situation as above,and has main problems of providing a method for producing amultiple-surface imposition vapor deposition mask that can satisfy bothenhancement in definition and reduction in weight even when a size isincreased, and of providing a multiple-surface imposition vapordeposition mask that is obtained in this manner, and a method forproducing an organic semiconductor element that can produce the organicsemiconductor element with high precision.

Solution to Problem

The present invention for solving the above described problem is amethod for producing a multiple-surface imposition vapor deposition maskformed by arranging a plurality of masks in an open space in a frame bydividing the plurality of masks in lengthwise and crosswise directionsof the open space, and has the steps of preparing the frame, attaching aplurality of metal masks provided with slits, and a resin film materialpositioned on front surface sides of the plurality of metal masks, tothe frame, and producing a resin mask by processing the resin filmmaterial, and forming openings corresponding to a pattern to be producedby vapor deposition in a plurality of rows lengthwise and crosswise.

In the above described invention, (1) the frame is configured to havesash bar portions that divide the open space into a plurality ofportions in lengthwise and crosswise directions, a plurality of sheetsof the resin film material that have dimensions individuallycorresponding to the respective metal masks can be used as the resinfilm material. In this case, the metal masks are respectively arrangedat predetermined positions on the respective sheets of the resin filmmaterial, before or after the respective plurality of sheets of theresin film material are attached to the sash bar portions of the frame.

In the invention described above, (2) the resin film material may be ofa single sheet that substantially covers an entire surface of the openspace in the frame. In this case, the plurality of metal masks can berespectively arranged at predetermined positions on the resin filmmaterial before or after the resin film material is attached to theframe.

In the invention described above, (3) as the resin film material, aplurality of sheets of the resin film material each having a lengthcorresponding to a dimension in a direction of any one of the lengthwiseand crosswise directions of the open space in the frame, and having alength shorter than a dimension of the open space in the other directionmay be combined. In this case, the plurality of metal masks arerespectively arranged at predetermined positions on the resin filmmaterial before or after the resin film material is attached to theframe.

Further, in the above described invention, as the plurality of metalmasks, some of the plurality of metal masks, for example, all or some ofthe metal masks in a single row in the lengthwise and crosswisearrangement are formed as a metal mask aggregate member that isintegrally formed, and a plurality of the metal mask aggregate memberscan be used.

Further, in the above described invention, in arranging the metal maskin the frame, a maximum allowable error in a width direction of a slitbetween an arrangement position in design thereof and an actualarrangement position can be set to be within 0.2 times as large as apitch of the openings, and a maximum allowable error in a lengthwisedirection of the slit can be set to be within 5 mm.

Further, in the above described invention, the step of attaching a metalplate for producing the respective metal masks, and a resin filmmaterial for producing the resin mask to the frame is performed, inplace of the step of attaching the respective metal masks and the resinfilm material for producing the resin mask to the frame, the metal plateis processed in a state in which the metal plate and the resin filmmaterial are attached to the frame, slits that penetrate through onlythe metal plate are provided to form the metal masks, after which, theresin film material is processed, and openings corresponding to apattern to be produced by vapor deposition can be formed in a pluralityof rows lengthwise and crosswise.

Further, in the above described invention, in forming the openingscorresponding to the pattern to be produced by vapor deposition in aplurality of rows lengthwise and crosswise by processing the resin filmmaterial, a reference sheet provided with the pattern corresponding tothe openings in advance is prepared, the reference sheet is bonded ontoa surface of the resin film material at a side where the metal mask isnot provided, laser irradiation is performed in accordance with thepattern of the reference sheet from the metal mask side while thepattern on the reference sheet is being recognized through the resinfilm material, and an opening pattern can be formed in the resin filmmaterial.

Further, the present invention for solving the above described problemis a multiple-surface imposition vapor deposition mask formed byarranging a plurality of masks in an open space in a frame by dividingthe plurality of masks in lengthwise and crosswise directions of theopen space, wherein each of the masks is configured by a metal maskprovided with a slit, and a resin mask that is positioned on a frontsurface of the metal mask, and has openings corresponding to a patternto be produced by vapor deposition arranged in a plurality of rowslengthwise and crosswise.

Further, the present invention for solving the above described problemis a method for producing an organic semiconductor element, wherein themultiple-surface imposition vapor deposition mask that is producedaccording to the production method having the above described featuresis used.

Advantageous Effects of Invention

According to the method for producing a multiple-surface impositionvapor deposition mask of the present invention, the weight can bereduced by configuring each mask of the plurality of masks that arearranged in the frame by the metal mask provided with slits, and theresin mask that is positioned on the front surface of the metal mask,and has the openings corresponding to the pattern to be produced byvapor deposition arranged by lengthwise and crosswise in a plurality ofrows. Therefore, even when the size is increased, reduction in weight isenabled.

Furthermore, after the plurality of metal masks and the resin filmmaterial for forming the resin mask are arranged in the frame, the resinfilm material is processed, and the openings corresponding to thepattern to be produced by vapor deposition are accurately provided.Therefore, minute precision at the time of arranging the metal masks isnot required, and even if the metal masks are arranged relativelyroughly, enhancement in definition of the mask is enabled. Like this,according to the present invention, the multiple-surface impositionvapor deposition mask capable of satisfying both enhancement indefinition and reduction in weight can be easily produced with highyield.

Further, according to the multiple-surface imposition vapor depositionmask of the present invention, both enhancement in definition andreduction in weight are satisfied as described above, and therefore,vapor deposition processing in production of an organic semiconductorelement or the like can be carried out with high precision.

Furthermore, according to the method for manufacturing an organicsemiconductor element of the present invention, an organic semiconductorelement can be produced with high precision.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view schematically showing a configuration of one embodimentof a multiple-surface imposition vapor deposition mask obtainedaccording to a production method of the present invention.

FIG. 2 (a) is a schematic enlarged perspective view that shows a metalmask of a mask portion by exploding the mask portion, and is forexplaining configurations of the respective mask portions in oneembodiment of the multiple-surface imposition vapor deposition maskshown in FIG. 1, and FIG. 2 (b) is a schematic enlarged perspective viewthat shows a resin mask of a mask portion by exploding the mask portion,and is for explaining configurations of the respective mask portions inone embodiment of the multiple-surface imposition vapor deposition maskshown in FIG. 1.

FIG. 3 (a) is a front view of each of the mask portions shown in FIG. 2,seen from a metal mask side, FIG. 3 (b) is a schematic sectional view ofthe same mask portion, and FIGS. 3 (c) and (d) are respectively frontviews of examples of the mask portion in other embodiments, seen fromthe metal mask side.

FIG. 4 is an enlarged sectional view of the vapor deposition maskportions shown in FIG. 3(b). A front view of the vapor deposition maskshowing, seen from the metal mask side, and (c) is a partial enlargedsectional view of (b).

FIGS. 5(a) to (d) are schematic views showing configuration examples ofa frame of the multiple-surface imposition vapor deposition maskobtained according to a production method of the present invention.

FIGS. 6 (a) to (d) are sectional views schematically showing respectivesteps of the production method of the present invention.

FIGS. 7 (a) to (f) are schematic views respectively showing arrangementexamples of the metal mask and a resin film material, which can be usedin the production method of the present invention.

FIGS. 8 (a) to (c) are schematic sectional views showing a relation of ashadow and a thickness of the metal mask for first through thirdvariations of the metal mask.

FIGS. 9 (a) to (d) are partial schematic sectional views showing firstthrough fourth variations of a relation of a slit of the metal mask, andan opening of a resin mask.

FIG. 10 is a partial schematic sectional view showing a relation of theslit of the metal mask and the opening of the resin mask.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, the present invention will be described specifically withuse of the drawings.

First, prior to explanation of a method for producing a multiple-surfaceimposition vapor deposition mask of the present invention, aconfiguration of the multiple-surface imposition vapor deposition maskaccording to the present invention that is obtained according to theproduction method will be described.

The multiple-surface imposition vapor deposition mask of the presentinvention is a multiple-surface imposition vapor deposition mask formedby arranging a plurality of masks in an open space in a frame bydividing the plurality of masks in lengthwise and crosswise directionsthereof, wherein the aforementioned respective masks are each configuredby a metal mask provided with slits and a resin mask that is positionedon a front surface of the metal mask, and has a openings correspondingto a pattern to be produced by vapor deposition arranged by lengthwiseand crosswise in a plurality of rows.

A multiple-surface imposition vapor deposition mask 1 according to thepresent invention is formed by arranging a plurality of masks 100 in anopen space 3 in a frame 2 by dividing the plurality of masks 100 inlengthwise and crosswise directions of the open space, as shown in FIG.1, for example.

Here, when a configuration of a portion of each mask 100 of theplurality of masks arranged in the frame 2 is seen, the configuration isadopted, in which a metal mask 10 provided with slits 15, and a resinmask 20 which is positioned on one surface of the metal mask 10 (anundersurface of the metal mask 10 in a case shown in FIG. 2 (b)), andhas openings 25 corresponding to a pattern to be produced by vapordeposition arranged by lengthwise and crosswise in a plurality of rowsare stacked, as shown in FIGS. 2 to 4.

Here, when a mass of the mask 100, and a mass of the vapor depositionmask that is composed of only a metal and is conventionally known arecompared on the assumption that thicknesses of the entire vapordeposition masks are the same, the mass of the vapor deposition mask 100of the present invention is lighter by an amount of a part of the metalmaterial of the conventionally known vapor deposition mask, which isreplaced with a resin material. Further, in order to reduce weight byusing the vapor deposition mask composed of only a metal, it isnecessary to reduce the thickness of the vapor deposition mask, but whenthe thickness of the vapor deposition mask is reduced, distortionsometimes occurs to the vapor deposition mask, and reduction indurability sometimes occurs when upsizing the vapor deposition mask.Meanwhile, according to the mask according to the present invention,even when the thickness of the entire vapor deposition mask is increasedto satisfy distortion and durability at the time of the mask beingupsized, reduction in weight can be achieved more than the vapordeposition mask that is formed of only a metal by the presence of theresin mask 20. Accordingly, in the multiple-surface imposition vapordeposition mask 1 of the present invention in the form of a combinationof a plurality of vapor deposition masks 100 each adopting theconfiguration like this, the effect of weight reduction by using theresin material as described above is especially enhanced, and theproblem of positional displacement of each unit masking pattern due todistortion by the tare weight or the like, and the problem of difficultyin handling due to increase in the total mass including the frame aresolved even if the vapor deposition mask 1 is capsized. Further, byusing the resin material, after a resin film to be an original sheet forthe resin mask (and the metal mask) is attached to the frame, the resinfilm is processed, and the openings corresponding to a predeterminedpattern can be formed in the production process thereof, as will bedescribed later. Therefore, the problem of positional displacements ofthe openings in the case of attaching the mask provided with theopenings in advance to the frame also can be solved. Furthermore, byusing the resin film, a reference sheet that is provided in advance witha pattern to be produced by vapor deposition, namely, the patterncorresponding to the openings to be formed, for example, is prepared aswill be described later, and the opening pattern is enabled to be formedby laser irradiation or the like while the pattern on the referencesheet is being watched in a state in which the reference sheet is bondedto the resin film material, namely, the openings are enabled to beformed in the resin film material in a so-called face-to-face state.Thereby, the multiple-surface imposition vapor deposition mask havingthe openings with high definition in which dimensional precision andpositional precision of the openings are extremely high can be provided.

Hereinafter, respective members configuring the multiple-surfaceimposition vapor deposition mask of the present invention will bedescribed specifically.

(Resin Mask)

The resin mask 20 is composed of a resin, and as shown in FIG. 2 (b),the openings 25 corresponding to a pattern to be produced by vapordeposition are arranged by lengthwise and crosswise in a plurality ofrows. Note that formation of the openings 25 is performed after themetal mask 10 and a resin film material 200 to be the original sheet ofthe resin mask 20 are bonded to the frame 2 as will be described later.Accordingly, as shown in FIG. 2 to FIG. 4, the openings 25 of the resinmask are formed in positions overlapping the slits 15 of the metal mask10. Further, the pattern to be produced by vapor deposition in thedescription of the present application means the pattern to be producedby using the vapor deposition mask, and, for example, when the vapordeposition mask is used in formation of an organic layer of an organicEL element, the pattern is in a shape of the organic layer.

For the resin mask 20, a conventionally known resin material can beproperly selected and used, and while the material is not especiallylimited, a material that enables formation of the opening 25 with highdefinition by laser processing or the like, has a low rate ofdimensional change and a low rate of humidity absorption under heat andwith passage of time, and is lightweight, is preferably used. As suchmaterials, a polyimide resin, a polyamide resin, a polyamide-imideresin, a polyester resin, a polyethylene resin, a polyvinylalcoholresin, a polypropylene resin, a polycarbonate resin, a polystyreneresin, a polyacrylonitrile resin, an ethylene-vinyl acetate copolymerresin, an ethylene-vinyl alcohol copolymer resin, anethylene-methacrylic acid copolymer resin, a polyvinyl chloride resin, apolyvinylidene chloride resin, cellophane, an ionomer resin and the likecan be cited. Among the materials illustrated in the above, the resinmaterials with the thermal expansion coefficients of 16 ppm/° C. or lessare preferable, the resin materials with rates of humidity absorption of1.0% or less are preferable, and the resin materials including both theconditions are especially preferable. In the present invention, theresin mask 20 is composed of the resin material that enables formationof the openings 25 with high definition as compared with the metalmaterial as described above. Accordingly, the vapor deposition mask 100having the openings 25 with high definition can be provided.

While the thickness of the resin mask 20 is not especially limited, theresin mask 20 is preferably as thin as possible in order to preventoccurrence of an insufficient vapor deposition portion, namely, a vapordeposition portion with a film thickness smaller than the intended vapordeposition film thickness, a so-called shadow, in the pattern that isproduced by vapor deposition, when vapor deposition is performed withuse of the vapor deposition mask 100 of the present invention. However,when the thickness of the resin mask 20 is less than 3 μm, a defect suchas a pinhole easily occurs, and the risk of deformation or the likeincreases. Meanwhile, when the thickness of the resin mask 20 exceeds 25μm, generation of a shadow can arise. With this point taken intoconsideration, the thickness of the resin mask 20 is preferably from 3μm to 25μ inclusive. By setting the thickness of the resin mask 20within this range, the defect such as a pinhole and the risk ofdeformation or the like can be reduced, and generation of a shadow canbe effectively prevented. In particular, the thickness of the resin mask20 is set to be from 3 μm to 10 μm inclusive, more preferably, from 4 μmto 8 μm inclusive, whereby the influence of a shadow at the time offorming a high-definition pattern exceeding 300 ppi can be preventedmore effectively. Note that in the mask 100, the metal mask 10 and theresin mask 20 may be directly bonded, or may be bonded via an adhesivelayer, and when the metal mask 10 and the resin mask 20 are bonded viathe adhesive layer, the total thickness of the resin mask 20 and theadhesive layer is preferably set to be within a range from 3 μm to 25 μminclusive, preferably from 3 μm to 10 μm inclusive, and more preferably,from 4 μm to 8 μm inclusive.

The shape and the size of the opening 25 are not especially limited, andcan be the shape and the size corresponding to the pattern to beproduced by vapor deposition. Further, as shown in FIG. 3 (a), a pitchP1 in a crosswise direction of the adjacent openings 25, and a pitch P2in a lengthwise direction can be also properly set in accordance withthe pattern to be produced by vapor deposition.

The positions at which the openings 25 are provided and the number ofthe openings 25 are not specially limited, and a single opening 25 maybe provided at a position overlapping the slit 15, or a plurality ofopenings 25 may be provided in the lengthwise direction, or thecrosswise direction. For example, as shown in FIG. 3 (c), when the slitextends in the lengthwise direction, two or more of the openings 25 thatoverlap the slit 15 may be provided in the crosswise direction.

A sectional shape of the opening 25 is not specially limited, and endsurfaces that face each other of the resin mask forming the opening 25may be substantially parallel with each other, but the sectional shapeof the opening 25 is preferably is the shape having broadening toward avapor deposition source. In other words, the sectional shape of theopening 25 preferably has a taper surface having broadening toward themetal mask 10 side. By making the sectional shape of the opening 25 havethe above configuration, a shadow can be prevented from being generatedin the pattern that is produced by vapor deposition when vapordeposition is performed with use of the vapor deposition mask of thepresent invention. While a taper angle θ shown in FIG. 4 can be properlyset with the thickness or the like of the resin mask 20 taken intoconsideration, an angle (θ) connecting a lower bottom distal end in theopening of the resin mask and an upper bottom distal end in the openingof the same resin mask is preferably within a range from 25° to 65°. Inparticular, within this range, the angle (θ) is preferably an anglesmaller than a vapor deposition angle of a vapor deposition machine tobe used. Furthermore, in FIG. 3 (b) and FIG. 4, an end surface 25 a thatforms the opening 25 shows a linear shape, but the end surface 25 a isnot limited thereto, and may be in a curved shape protruding outward,namely, a shape of the entire opening 25 may be in a bowl shape. Theopening 25 that has the sectional shape like this can be formed byperforming multistage laser irradiation that properly adjusts theirradiation position of the laser and irradiation energy of the laser atthe time of formation of the opening 25, or changes the irradiationposition stepwise, for example.

Since a resin material is used for the resin mask 20, formation of theopening 25 is enabled without using the processing methods that are usedin the conventional metal processing, for example, the processingmethods such as etching and cutting. Namely, the method for forming theopening 25 is not specially limited, and the opening 25 can be formed byusing various processing methods, for example, a laser processing methodcapable of forming the opening 25 with high definition, precision pressprocessing, photolithography processing and the like. The method forforming the opening 25 by a laser processing method or the like will bedescribed later.

As the etching processing method, for example, a wet etching method suchas a spray etching method that sprays an etching agent at apredetermined spray pressure from an injection nozzle, an immersionetching method that immerses an object in an etching solution filledwith an etching agent, and a spin etching method that drops an etchingagent, and a dry etching method using gas, plasma and the like can beused.

(Metal Mask)

The metal mask 10 is composed of a metal, and the slits 15 that extendin the lengthwise direction or the crosswise direction are arranged in aplurality of rows in the position overlapping the openings 25, in otherwords, in the position where all of the openings 25 arranged in theresin mask 20 are visible, when seen from a front of the metal mask 10.Note that in FIGS. 2 and 3, the slits 15 that extend in the lengthwisedirection of the metal mask 10 are continuously arranged in thecrosswise direction. Further, in the embodiment shown in FIGS. 2 and 3,the example in which the slits 15 that extend in the lengthwisedirection or the crosswise direction are arranged in a plurality of rowsis cited and described, but the slits 15 may be arranged in only asingle row in the lengthwise direction or in the crosswise direction.

While a width W of the slit 15 is not specially limited, the width W ispreferably designed to be shorter than at least the pitch between theadjacent openings 25. More specifically, as shown in FIG. 3 (a), whenthe slit 15 extends in the lengthwise direction, the width W in thecrosswise direction of the slit 15 is preferably made shorter than thepitch P1 of the openings 25 adjacent to each other in the crosswisedirection. Similarly, though not illustrated, when the slit 15 extendsin the crosswise direction, a width in the lengthwise direction of theslit 15 is preferably made shorter than a pitch P2 of the openings 25adjacent to each other in the lengthwise direction. Meanwhile, a lengthL in the lengthwise direction in a case of the slit 15 extending in thelengthwise direction is not specially limited, and can be properlydesigned in accordance with the lengthwise length of the metal mask 10and the positions of the openings 25 that are provided in the resin mask20.

Further, the slit 15 that continuously extends in the lengthwisedirection, or in the crosswise direction may be divided into a pluralityof portions by a bridge 18. Note that FIG. 3 (d) is a front view of thevapor deposition mask 100 seen from the metal mask 10 side, and shows anexample in which the single slit 15 continuously extending in thelengthwise direction shown in FIG. 3 (a) are divided into a plurality ofportions (slits 15 a and 15 b) by the bridge 18. While a width of thebridge 18 is not specially limited, the width of the bridge 18 ispreferably around 5 μm to 20 μm. By setting the width of the bridge 18to be within this range, the rigidity of the metal mask 10 can beeffectively enhanced. The arrangement position of the bridge 18 is notspecially limited, but the bridge 18 is preferably arranged in such amanner that the slit after being divided is overlaid on the two or moreof the openings 25.

While a sectional shape of the slit 15 that is formed in the metal mask10 is not specially limited, either, the sectional shape is preferably ashape that has broadening toward the vapor deposition source as shown inFIG. 3 (b), similarly to the opening 25 in the above described resinmask 20.

The material of the metal mask 10 is not specially limited, and theconventionally known material in the field of the vapor deposition maskcan be properly selected and used, and, for example, a metal materialsuch as stainless steel, an iron-nickel alloy, and an aluminum alloy canbe cited. Above all, an invar material that is an iron-nickel alloy canbe preferably used since an invar material is hardly deformed by heat.

Further, when the vapor deposition mask 100 at a front side of thesubstrate needs to be attracted by a magnetic force by arranging amagnet or the like at a rear side of the substrate when vapor depositionis performed onto the substrate with use of the vapor deposition mask100 of the present invention, the metal mask 10 is preferably formed ofa magnetic substance. As the metal mask 10 of a magnetic substance, pureiron, carbon steel, W steel, Cr steel, Co steel, KS steel, MK steel, NKSsteel, Cunico steel, an AL-Fe alloy and the like can be cited. Further,when the material itself that forms the metal mask 10 is not of amagnetic substance, magnetism may be given to the metal mask 10 bydispersing powder of the above described magnetic substance into thematerial.

While the thickness of the metal mask 10 is not specially limited, thethickness is preferably around 5 μm to 100 μm. In the case ofconsideration being given to prevention of a shadow at the time of vapordeposition, the thickness of the metal mask 10 is preferably small, butwhen the thickness of the metal mask 10 is made thinner than 5 μm, therisk of breakage and deformation is increased, and handling is likely tobe difficult. However, since in the present invention, the metal mask 10is integrated with the resin mask 20, the risks of breakage anddeformation can be reduced even if the thickness of the metal mask 10 isvery small such as 5 μm, and a metal mask is usable if the thicknessthereof is 5 μm or more. Note that the case in which the thickness ofthe metal mask 10 is made larger than 100 μm is not preferable becausegeneration of a shadow can arise.

Hereinafter, with use of FIG. 8 (a) to FIG. 8 (c), a relation ofgeneration of a shadow, and the thickness of the metal mask 10 will bespecifically described. As shown in FIG. 8 (a), when the thickness ofthe metal mask 10 is small, the vapor deposition material that isreleased toward a vapor deposition target from a vapor deposition sourcepasses through the slit 15 of the metal mask 10 and the opening 25 ofthe resin mask 20 without colliding with an inner wall surface of theslit 15 of the metal mask 10 and a surface of the metal mask 10 at aside where the resin mask 20 is not provided, and reaches the vapordeposition target. Thereby, formation of the vapor deposition patternwith a uniform film thickness onto the vapor deposition target isenabled. Namely, generation of a shadow can be prevented. Meanwhile, asshown in FIG. 8 (b), when the thickness of the metal mask 10 is large,for example, when the thickness of the metal mask 10 is a thicknessexceeding 100 μm, a part of the vapor deposition material that isreleased from the vapor deposition source collides with the inner wallsurfaces of the slit 15 of the metal mask 10, and the surface of themetal mask 10 at the side where the resin mask 20 is not formed, andcannot reach the vapor deposition target. As the vapor depositionmaterial that cannot reach the vapor deposition target increases more,an undeposited portion having a film thickness smaller than the intendedvapor deposition film thickness occurs to the vapor deposition targetmore, namely, a shadow is generated.

In order to prevent generation of a shadow sufficiently, the sectionalshape of the slit 15 is preferably made a shape having broadening towardthe vapor deposition source, as shown in FIG. 8 (c). By adopting thesectional shape like this, the vapor deposition material can be causedto reach the vapor deposition target without the vapor depositionmaterial that is released from the vapor deposition source collidingwith the surface of the slit 15 and the inner wall surface of the slit15 even if the thickness of the entire vapor deposition mask is madelarge with the objective of prevention of distortion that can occur tothe vapor deposition mask 100, or enhancement of durability. Morespecifically, the angle that is formed by a straight line connecting thelower bottom distal end in the slit 15 of the metal mask 10 and theupper bottom distal end in the slit 15 of the same metal mask 10, andthe bottom surface of the metal mask 10 is preferably within a range of25° to 65°. In particular, in this range, an angle that is smaller thanthe vapor deposition angle of the vapor deposition machine to be used ispreferable. By adopting the sectional shape like this, the depositionmaterial can be caused to reach the vapor deposition target without thevapor deposition material released from the vapor deposition sourcecolliding with the inner wall surface of the slit 15 even when thethickness of the metal mask 10 is made relatively large with theobjective of prevention of distortion that can arise in the vapordeposition mask 100, or enhancement of durability. Thereby, generationof a shadow can be prevented more effectively. Note that FIG. 8 is apartial schematic sectional view for explaining the relation ofgeneration of a shadow and the slit 15 of the metal mask 10. Note thatin the form shown in FIG. 8 (c), the slit 15 of the metal mask 10 hasthe shape having broadening toward the vapor deposition source side, andthe end surfaces that face each other of the opening of the resin mask20 are substantially parallel with each other, but in order to preventgeneration of a shadow more effectively, the sectional shapes of boththe slit of the metal mask 10 and the opening 25 of the resin mask 20are preferably the shapes having broadening toward the vapor depositionsource side. Accordingly, in the method for producing themultiple-surface imposition vapor deposition mask of the presentinvention, the slit 15 of the metal mask 10 and the opening 25 of theresin mask 20 are preferably produced so that the sectional shapes ofthe slit of the metal mask and the opening of the resin mask become theshapes having broadening toward the vapor deposition source side.

FIGS. 9 (a) to (d) are partial schematic sectional views showing therelation of the slit of the metal mask and the opening of the resinmask, and in the forms that are illustrated, the sectional shapes ofentire openings that are formed by the slits 15 of the metal masks andthe openings 25 of the resin masks show step shapes. As shown in FIG. 9,the sectional shapes of the entire openings are formed into step shapeshaving broadening toward the vapor deposition source sides, wherebygeneration of a shadow can be prevented effectively.

Accordingly, in the method for producing the multiple-surface impositionvapor deposition mask of the present invention, the vapor depositionmask is preferably produced in such a manner that the sectional shape ofthe entire opening that is formed by the slit of the metal mask and theopening 25 of the resin mask becomes a step shape.

In the sectional shapes of the slit 15 of the metal mask and the resinmask 20, the end surfaces that face each other may be substantiallyparallel with each other as shown in FIG. 9 (a), but as shown in FIGS. 9(b) and (c), only any one of the slit 15 of the metal mask and theopening of the resin mask may have a sectional shape having broadeningtoward the vapor deposition source side. Note that as described in theabove, in order to prevent generation of a shadow more effectively, bothof the slit 15 of the metal mask, and the opening 25 of the resin maskpreferably have the sectional shapes having broadening toward the vapordeposition source side as shown in FIG. 4 and FIG. 9 (d).

A width of a flat portion (reference sign (X) in FIG. 9) in the sectionformed into the above described step shape is not specially limited, butwhen the width of the flat portion (X) is less than 1 μm, the effect ofprevention of shadow generation tends to reduce due to interference ofthe slit of the metal mask. Accordingly, with this point taken intoconsideration, the width of the flat portion (X) is preferably 1 μm ormore. A preferable upper limit value is not specially limited, and canbe properly set with consideration given to the Size of the opening ofthe resin mask, the space between the adjacent openings and the like,and as one example, the preferable upper limit value is approximately 20μm.

Note that FIGS. 9 (a) to (d) described above each shows an example inwhich the single opening 25 that overlaps the slit 15 is provided in thecrosswise direction when the slit extends in the lengthwise direction,but as shown in FIG. 10, two or more of the openings 25 that overlap theslit 15 may be provided in the crosswise direction when the slit extendsin the lengthwise direction. In FIG. 10, both the slit 15 of the metalmask and the opening 25 of the resin mask have sectional shapes havingbroadening toward the vapor deposition source side, and two or more ofthe openings 25 that overlap the slit 15 are provided in the crosswisedirection.

(Frame)

Next, a configuration of the frame 2 for holding a plurality of vapordeposition masks 100 that are each configured by the combination of themetal mask 10 and the resin mask 20 as described above is not speciallylimited, and while in the embodiment shown in FIG. 1, for example, theframe 2 is formed by having a lengthwise sash bar portion 2 b and acrosswise sash bar portion 2 c for dividing the open space 3 formed byan outer frame portion into a plurality of portions in the lengthwiseand crosswise directions thereof, in addition to a rectangular outerframe portion 2 a, the presence or absence of the lengthwise sash barportion 2 b and the crosswise sash bar portion 2 c is optional as longas the frame 2 has at least the outer frame portion 2 a. For example,the configurations of the frame 2 which is formed by only the outerframe portion 2 a as shown in FIG. 5 (a), the frames 2 that are eachformed by the outer frame portion 2 a and either the lengthwise sash barportion 2 b or the crosswise sash bar portion 2 c as shown in FIG. 5(b),(c) and the like also can be adopted.

Further, as shown in FIG. 5 (d), for example, the frame 2 having theouter frame portion 2 a, the lengthwise sash bar portion 2 b and thecrosswise sash bar portions 2 c as shown in FIG. 1 is set as a main bodyportion, and a plurality of small frame members 5 that can berespectively mounted in the openings that are formed by being divided bythe lengthwise sash bar portion 2 b and the crosswise sash bar portions2 b, and correspond to the respective masks can be additionally preparedfor the main body portion. In this case, the resin film material 200 andthe metal mask 10 are arranged in each of the plurality of small framemembers 5 as will be described later, and thereafter, the small framemembers 5 can be arranged in and joined to the openings corresponding tothe respective masks of the frame 2 to be the main body portion.

Even when the frames 2 that are each formed by the outer frame portion 2a, and either the lengthwise sash bar portion 2 b or the crosswise sashbar portion 2 c as shown in FIGS. 5 (b) and (c) are adopted, theseframes 2 are used as the main body portions, a plurality of the smallframe members 5 corresponding to the respective masks are additionallyprepared similarly to the frame shown in FIG. 5 (d), and these smallframe members can be also arranged in and joined to the frames 2 to bethe main body portions. In this case, in each of the frames 2 to be themain body portions, only either the lengthwise sash bar portion 2 b orthe crosswise sash bar portion 2 c is present, but the crosswise orlengthwise sash bars that are not present in the frames 2 to be the mainbody portions can be supplemented by the small frame members 5.

Production Method of the Present Invention

A method for producing a multiple-surface imposition vapor depositionmask according to the present invention is a method for producing themultiple-surface imposition vapor deposition mask that is formed byarranging a plurality of masks 100 in the open space 3 in the frame 2 bydividing the plurality of masks 100 in the lengthwise and crosswisedirections, wherein in configuring the aforementioned respective masks100 each by the metal mask 10 provided with slits, and the resin mask 20that is positioned on the front surface of the metal mask, and has theopenings corresponding to the pattern to be produced by vapor depositionarranged by lengthwise and crosswise in a plurality of rows, therespective metal masks 10 and the resin film material 200 for producingthe aforementioned resin masks are attached to the aforementioned frame2, after which, the aforementioned resin film materials 200 areprocessed, and the openings corresponding to the pattern to be producedby vapor deposition are formed in a plurality of rows lengthwise andcrosswise.

FIG. 6 is a process chart for describing the method for producing themultiple-surface imposition vapor deposition mask of the presentinvention. Note that (a) to (d) are all sectional views, and the wallthicknesses and the dimensions of the respective members are expressedin exaggeration to facilitate illustration.

As shown in FIG. 6 (a), the frame 2 is prepared first.

As shown in FIG. 6 (b), a plurality of the metal masks 10 provided withslits, and the resin film materials 200 that are positioned on the frontsurfaces of the aforementioned plurality of metal masks are attached tothe frame 2.

Here, while as for the positional precision in the arrangement of themetal masks 10 to the frame 2, there is no problem in enhancing thepositional precision, in the production method of the present invention,the aforementioned plurality of metal masks 10 and the resin filmmaterials 200 for forming the aforementioned resin masks are arranged inthe frame 2, after which, the aforementioned resin film materials 200are processed, and the openings corresponding to the pattern to beproduced by vapor deposition are accurately provided. Therefore,especially high precision is not required at the time of arranging themetal masks 10, and even if the metal masks 10 are arranged relativelyroughly, definition of the masks can be enhanced. For example, inarrangement of the aforementioned metal mask 10 in the aforementionedframe 2, even if a maximum allowable error in the width direction of theslits between the arrangement position in design and the actualarrangement position is within 0.2 times as large as the pitch P1 of theopenings 25, is preferably within 0.15 times as large as the pitch P1,and a maximum allowable error in the lengthwise direction of the slitsis within 5 mm, there is no risk of causing reduction in yield ofproducts, and the operation efficiency can be enhanced.

Note that the method, the sequence and the like of attaching theplurality of metal masks 10 and the resin film materials 200 to theframe 2 are not specially limited, and various modes can be adopted. Inthis regard, details will be described as follows.

Thereafter, as shown in FIG. 6 (c), the resin film materials 200 areprocessed in the state in which the plurality of metal masks and theresin film materials are all attached to the frame 2. As shown in FIG. 6(d), the openings corresponding to the pattern to be produced by vapordeposition are formed in a plurality of rows lengthwise and crosswise inthe resin film, and the resin mask 20 is produced, whereby themultiple-surface imposition vapor deposition mask is produced. While themethod for forming the openings by processing the resin film material200 is not specially limited, the openings can be formed by patternopening by, for example, the conventionally known laser processingmethod, a laser light X is emitted from the metal mask side, and theopenings corresponding to the pattern to be produced by vapor depositionare formed in a plurality of rows lengthwise and crosswise in theaforementioned resin plate. Note that the pattern to be produced byvapor deposition in the description of the present application means thepattern to be produced by using the vapor deposition mask, and, forexample, in the case of using the vapor deposition mask in formation ofthe organic layer of the organic EL element, the pattern is in the shapeof the organic layer.

Note that when the resin film materials 200 are each processed toprovide the openings in the state fixed to the state in which theplurality of metal masks and the resin film materials are all attachedto the frame 2 as described above, a reference sheet that is provided inadvance with a pattern corresponding to the openings 25 to be formed maybe prepared, and in a state in which the reference sheet is bonded to asurface of the resin film material 200 at a side where the metal mask 10is not provided, laser irradiation corresponding to the pattern on thereference sheet may be performed from the metal mask 10 side. Accordingto the method, the openings 25 can be formed in the resin film material200 in a so-called face-to-face state in which laser irradiation isperformed while the pattern on the reference sheet bonded to the resinfilm material 200 is being watched, and the resin mask 20 having theopenings 25 with high definition that have extremely high dimensionalprecision of the openings can be formed. Further, in this method,formation of the openings 25 is performed in the state fixed to theframe, the vapor deposition mask that is excellent in not onlydimensional precision but also positional precision can be provided.

Note that in the case of using the above described method, it isnecessary to be able to recognize the pattern on the reference sheetwith a laser irradiator or the like through the resin film material 200from the metal mask 10 side. As the resin film material 200, use of theresin film material having transparency is necessary when the materialhas a certain degree of thickness, but when the resin film material hasa preferable thickness with the influence on a shadow taken intoconsideration as described above, for example, a thickness ofapproximately 3 μm to 25 μm, the pattern on the reference sheet can berecognized even if the resin film material is colored.

A method for bonding the resin film 200 and the reference sheet is notspecially limited, and when the metal mask 10 is a magnetic body, forexample, a magnet or the like is arranged at a rear side of thereference sheet, and the resin film material 200 and the reference sheetare bonded to each other by being attracted. Besides this, the resinfilm material 200 and the reference sheet also can be bonded to eachother with use of an electrostatic adsorbing method or the like. As thereference sheet, a TFT substrate having a predetermined pattern, a photomask and the like can be cited, for example.

(Optionally Set Matters in Production Method of the Present Invention:Method for Attaching Metal Mask and Resin Film Material to Frame andAttaching Sequence)

As described above, in the production method of the present invention,the method, the sequence and the like of attaching the plurality ofmetal masks 10 and the resin film material 200 to the frame 2 are notspecially limited, and various modes can be adopted.

Namely, a method for supporting the metal mask 10 and the resin filmmaterial 200 to the frame 2 may be (A) a method that joins the metalmask 10 to the frame 2 by, for example, spot welding or the like, andsupports the resin film material 200 that is joined to the metal mask 10by an adhesive, a tackiness agent, fusion or the like to the frame 2 (Inthis case, the resin film material is equal to or a slightly smallerthan the area of the metal mask.), or may be (B) a method that joins theresin film material 200 to the frame 2 by an adhesive, a tackinessagent, deposition (high frequency fusion or the like) or the like, andsupports the metal mask 10 that is similarly joined to the resin filmmaterial by an adhesion, a tackiness agent, deposition (high frequencyfusion or the like) or the like to the frame 2 (In this case, the metalmask is smaller than the area of the resin film material, and aplurality of metal masks can be arranged on a single resin filmmaterial.) Further, in any of the modes of (A) and (B), as to thesequence of joining, any of joining of the metal mask 10 or the resinfilm material 200 to the frame 2, and joining of the metal mask 10 andthe resin film material 200 may be the first.

The resin film material may be a resin layer that is obtained by coatingthe metal plate to be the original plate of the metal mask 10 with aresin solution. In the mode as the above described (A), a resin-filmcoated metal plate that is produced by forming a resin film layer bycoating the metal plate to be the original plate of the metal mask 10with a resin solution, or by performing resin coating at the time ofextending the metal plate, for example, can be used. Alternatively, ametal plate with a resin layer also can be obtained by bonding the resinsheet to the metal plate. As a method for bonding the metal plate andthe resin plate, various tackiness agents may be used, or a resin sheethaving self-adhesiveness may be used, for example. In this case, slitsthat penetrate through only the metal plate are formed into the metalplate having a front surface coated with the resin film material, andthereby, the metal mask 10 to which the resin film material 200 isbonded is made. The process step is not specially limited, and may beany process step as long as desired slits can be formed in only themetal mask, but a known dry or wet etching method or the like can beadopted, for example. Formation of the metal slits from the metal platelike this can be carried out either before or after the resin-filmcoated metal plate is joined to the frame 2.

Since the resin film layer causes change with passage of time due to theinfluence of a temperature and humidity during a certain time periodafter formation, it is preferable from the viewpoint of enhancement inyield to provide a so-called aging period until the shape is fixed.

Further, in the mode as in the above described (B), as a method forarranging the metal mask to the resin film material 200, various modescan be adopted. Examples of the embodiment like this are shown in FIGS.7 (a) to (f).

An embodiment shown in FIG. 7 (a) shows an example of using a pluralityof resin film materials 200 which are in one to one correspondence withthe respective plurality of metal masks 10.

In this embodiment, as the frame 2 for use, a frame having the outerframe portion 2 a, the lengthwise sash bar portion 2 b and the crosswisesash bar portion 2 c as illustrated in FIG. 1 shown above is used, or aframe in which a plurality of the small frame members 5 as shown in FIG.5 (d) are additionally prepared, and the resin film materials 200 eachhaving the single metal mask 10 arranged thereon are respectively joinedto the respective openings corresponding to the respective masks. Notethat joining of the respective metal masks 10 to the respective resinfilm materials 200 can be carried out either before or after joining ofthe respective resin film materials 200 to the frame 2.

The embodiments shown in FIGS. 7 (b) to (d) show examples of each usinga single sheet of the resin film material which substantially covers theentire surface of the open space in the aforementioned frame, as theaforementioned resin film material 200.

In the embodiment of FIG. 7 (b), a plurality of the metal masks 10 arearranged in the lengthwise and crosswise directions of the resin filmmaterial 200.

Note that the plurality of metal masks 10 do not have to be alwaysformed as separate members respectively as shown in FIG. 7 (b), and asthe plurality of metal masks, some of the plurality of masks, forexample, all or some of the masks in the single row in the lengthwise orcrosswise arrangement are formed as a metal mask aggregate memberintegrally formed, and a plurality of the metal mask aggregate memberscan be used. The embodiments shown in FIGS. (c) and (d) show examples asabove. In the embodiment of FIG. 7 (c), a metal mask aggregate member300 that is integrally formed by all of a plurality of metal masks in asingle row in the lengthwise direction in the drawing is produced, and aplurality of the metal mask aggregate members 300 are arranged in thecrosswise direction in the drawing. Further, in the embodiment of FIG. 7(d), a metal mask aggregate member 301 integrally formed by all of aplurality of metal masks in a single row in the lengthwise direction inthe drawing is adopted similarly to FIG. 7 (c), but in the metal maskaggregate member 301, frame portions that divide the respective metalmasks from one another in the crosswise direction are not present,unlike the metal mask aggregate member 300 of FIG. 7 (c), and in themetal mask aggregate member 301, slits 315 that are formed in thelengthwise direction in the drawing are formed to continue throughoutsubstantially an entire length thereof. Even in the mode as shown inFIG. 7 (d), the frame having the shape that is suitable as the shape ofthe frame 2, that is, the frame having the outer frame portion 2 a, andthe lengthwise sash bar portion 2 b and the crosswise sash bar portion 2c as illustrated in FIG. 1, or the frame having the outer frame portion2 a and the crosswise sash bar portion 2 c, or the like is used incombination, whereby the individual metal masks can be formed by beingdivided from one another. Note that in the embodiment as shown in FIG. 7(d), from the positional relation of the frame 2 with the sash portions,the metal mask aggregate members 301 are arranged in the resin filmmaterial 200 prior to joining of the resin film material 200 to theframe 2.

As the aforementioned resin film material 200, the embodiments shown inFIGS. 7 (e) and (f) each shows an example of combining a plurality ofsheets of resin film material each having a length corresponding to adimension in any one direction of the lengthwise and the crosswisedirections of the open space in the aforementioned frame 2, and having alength shorter than the dimension of the open space in the otherdirection. Namely, the embodiments shown in FIGS. 7 (e) and (f) eachshows the example of combining a plurality of sheets of theaforementioned resin film material 200 each having a lengthcorresponding to the dimension in the lengthwise direction of the openspace in the frame 2 in which the resin film is to be fitted, and havinga length shorter than the dimension in the crosswise and lengthwisedirection of the open space.

As the resin film material has a larger area, the dimensional changesdue to external stress applied at the time of being attached to theframe 2, thermal expansion or contraction, and the like tends to berelatively larger, and the size of the resin film material is reduced toa certain degree, these problems can be decreased.

In the embodiment of FIG. 7 (e), a plurality of metal masks 10 arearranged in each of the rows in the lengthwise direction of therespective resin film materials 200 with short widths as describedabove. Note that joining of the plurality of metal masks 10 to theaforementioned resin film materials 200 can be carried out either beforeor after joining of the respective resin film materials 200 to the frame2.

Further, in the embodiment of FIG. 7 (f), the metal mask aggregatemembers 301 having the similar shapes to those shown in theaforementioned FIG. 7 (d) are arranged one by one. As the shape of theframe 2 that is combined with the metal mask aggregate members 301 likethis is similar to the shape that is described in the embodiment of FIG.7 (d). Note that in the embodiment like this, it is necessary to arrangethe metal mask aggregate members 301 in the resin film material 200prior to joining of the resin film material 200 to the frame 2, asdescribed above.

(Optionally Set Matter in Production Method of the Present Invention:Slimming Step)

Further, in the production method of the present invention, a slimmingstep may be performed between the steps described above, or after thesteps. The step is an optional step in the production method of thepresent invention, and is the step of optimizing the thickness of themetal mask 10, and the thickness of the resin mask 20. The preferablethicknesses of the metal mask 10 and the resin mask 20 may be properlyset in the aforementioned preferable ranges, and the detailedexplanation here will be omitted.

For example, when as the metal plate with a resin film, a metal platewith a resin film having a certain degree of thickness is used,excellent durability and transportability can be given when the metalplate with a resin film and the metal mask 10 with a resin film aretransported during the production process, and when the multiple-surfaceimposition vapor deposition mask 1 that is produced according to theabove described production method is transported. Meanwhile, in order toprevent generation of a shadow or the like, the thicknesses of therespective vapor deposition masks 100 that are incorporated in themultiple-surface imposition vapor deposition mask 1 that is obtainedaccording to the production method of the present invention ispreferably the optimum thicknesses. The slimming step is a useful stepin the case of optimizing the thickness of the vapor deposition mask 100while satisfying durability and transportability during the productionprocess or after the process.

Slimming of the metal plate to be the metal mask 10 and the metal mask10, namely, optimization of the thickness of the metal mask can berealized by etching the surface of the metal plate at the side that isnot in contact with the resin film 200, or the surface of the metal mask10 at the side that is not in contact with the resin film 200 or theresin mask 20 by using the etching agent capable of etching the metalplate and the metal mask 10, between the steps described above, or afterthe steps.

Slimming of the resin film 200 to be the resin mask 20 and the resinmask 20, namely, optimization of the thicknesses of the resin film 200and the resin mask 20 is similar to the above, and can be realized byetching the surface of the resin film 200 at the side that is not incontact with the metal plate and the metal mask 10, or the surface ofthe resin mask 20 at the side that is not in contact with the metal mask10 by using the etching agent capable of etching the materials of theresin film 200 and the resin mask 20. Further, after themultiple-surface imposition vapor deposition mask 1 is formed, both themetal mask 10 and the resin mask 20 are subjected to etching processing,whereby the thicknesses of both of them also can be optimized betweenthe steps described above, or after the steps.

In the slimming step, the etching agent for etching the resin film 200or the resin mask 20 can be properly set in accordance with the resinmaterial of the resin film 200 or the resin mask 20, and is notspecially limited. For example, when a polyimide resin is used as theresin material for the resin film 200 or the resin mask 20, an alkaliaqueous solution in which sodium hydroxide or potassium hydroxide isdissolved, hydrazine and the like can be used, as the etching agent. Asthe etching agent, a commercially available product can be directlyused, and as the etching agent for a polyimide resin, TPE3000 made byToray Engineering Co., Ltd. or the like is usable.

(Method for Producing Organic Semiconductor Element)

A method for producing an organic semiconductor element of the presentinvention is characterized by forming an organic semiconductor elementby using the multiple-surface imposition vapor deposition mask 1produced according to the production method of the present inventiondescribed in the above. As for the multiple-surface imposition vapordeposition mask 1, the multiple-surface imposition vapor deposition mask1 produced according to the production method of the present inventiondescribed above can be directly used, and therefore, the detailedexplanation here will be omitted. According to the multiple-surfaceimposition vapor deposition mask of the present invention describedabove, an organic semiconductor element having a pattern with highdefinition can be formed by the openings 25 with high dimensionalprecision which are included by the respective vapor deposition masks100 arranged in the multiple-surface imposition vapor deposition mask 1.As the organic semiconductor element that is produced according to theproduction method of the present invention, an organic layer of anorganic EL element, a light emitting layer, a cathode electrode and thelike, for example, can be cited. In particular, the method for producingthe organic semiconductor element of the present invention can befavorably used in production of the R, G and B light emitting layers ofthe organic EL element which are required to have pattern precision withhigh definition.

The present invention is described specifically based on the embodimentsthus far, but the present invention is not limited to the embodiments asdescribed as above in any way, and can adopt various forms within therange described in claims.

REFERENCE SIGNS LIST

-   1 Multiple-surface imposition vapor deposition mask-   2 Frame-   3 Open space in frame-   100 Vapor deposition mask-   10 Metal mask-   15 Slit-   18 Bridge-   20 Resin mask-   25 Opening-   200 Resin film material

1. A multiple-surface imposition vapor deposition mask formed byarranging a plurality of masks in an open space in a frame, theplurality of masks comprising: a metal mask and a resin mask, whereinthe resin mask has openings, the metal mask has through holes, and theopenings and the through holes are stacked.
 2. The multiple-surfaceimposition vapor deposition mask according to claim 1, the metal mask isof a magnetic substance.
 3. The multiple-surface imposition vapordeposition mask according to claim 1, wherein a sectional shape of theopenings has broadening toward a vapor deposition source direction. 4.The multiple-surface imposition vapor deposition mask according to claim1, wherein a thickness of the metal mask is 5 μm to 100 μm inclusive. 5.The multiple-surface imposition vapor deposition mask according to claim1, wherein a thickness of the resin mask is 3 μm to 25 μm inclusive.